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- W1963920450 abstract "The potential of the high-growth rate hydride vapour phase epitaxy technique and laser lift-off for the fabrication of free-standing GaN substrates is explored. Structural and optical properties of 300 µm thick free-standing GaN have been investigated employing different analytical techniques. The x-ray diffraction (XRD) measurements prove good crystalline quality of the material grown. A comparatively low value of (3 ± 1) × 1016 cm−3 of Ga vacancy-related defects is inferred from positron annihilation spectroscopy data. Complete strain relaxation is observed on the Ga-polar face of the free-standing GaN by XRD and Raman spectroscopy measurements. The strain-free homoepitaxy will significantly reduce the defect density, and thus an improvement of the device performance and lifetime can be realized." @default.
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- W1963920450 date "2005-07-01" @default.
- W1963920450 modified "2023-09-24" @default.
- W1963920450 title "Investigation of the structural and optical properties of free-standing GaN grown by HVPE" @default.
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- W1963920450 doi "https://doi.org/10.1088/0022-3727/38/14/007" @default.
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