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• W1963935897 abstract "We report Reflectance Difference (RD) measurements on (001) GaAs surface quantum wells (QW) under Ultra High Vacuum (UHV) conditions from 1.7 to 5.0 eV. The QW is embedded between an arsenic-rich reconstructed GaAs surface and an AlAs barrier. The samples, grown by MBE with a protective arsenic cap layer, were heated to 320 and 430 °C to desorb the As layer and form c(4 × 4) and (2 × 4) surface reconstructions, respectively. By modifying the surface reconstruction, we are able to separate the contributions to the optical anisotropy from the surface region (mainly associated with the As dimers) from those originating below the surface." @default.
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• W1963935897 date "1998-12-01" @default.
• W1963935897 modified "2023-10-17" @default.
• W1963935897 title "Reflectance Difference Spectroscopy of GaAs Asymmetric Surface Quantum Wells above the Fundamental Gap" @default.
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• W1963935897 doi "https://doi.org/10.1002/(sici)1521-396x(199812)170:2<317::aid-pssa317>3.0.co;2-v" @default.
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