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- W1963961126 abstract "In this paper, we present the application of photobleachable positive deep-UV resist and contrast enhancement material (CEM) to KrF excimer laser lithography. The effects of the photobleaching characteristics of the resist and CEM on the resist pattern angles and profiles were examined and optimization of these materials was performed. High-aspect-ratio 0.5 µm-line-and-space patterns were successfully obtained by optimization of the materials. PROLITH (positive resist optical lithography model) has excellently reproduced actual pattern profiles." @default.
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- W1963961126 date "1989-11-01" @default.
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- W1963961126 title "Application of Photobleachable Positive Resist and Contrast Enhancement Material to KrF Excimer Laser Lithography" @default.
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- W1963961126 doi "https://doi.org/10.1143/jjap.28.2357" @default.
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