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- W1963965615 abstract "The effect of c-plane sapphire nitridation upon exposure to a rf N2 plasma at temperatures in the range 100–700 °C on the quality of GaN epilayers grown by MBE is investigated. A homogeneous AlN layer is formed at 200 °C. Nitridation at higher temperatures causes rough and non-homogeneous nitridated layer including both AlN and NO. Lowering the nitridation temperature to 200 °C results in the improvement of the GaN structural and photoluminescence properties. The results are interpreted in the framework of a chemical model based on the competition between formation of AlN and NO whose adsorption/desorption equilibrium on the sapphire surface strongly depends on temperature." @default.
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- W1963965615 date "2001-12-01" @default.
- W1963965615 modified "2023-09-23" @default.
- W1963965615 title "The Chemistry of Sapphire Nitridation in Relation to the GaN Structural Quality: Why Low Temperature 200��C Nitridation?" @default.
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- W1963965615 doi "https://doi.org/10.1002/1521-396x(200112)188:2<561::aid-pssa561>3.0.co;2-j" @default.
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