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- W1963999914 abstract "Electronic and optical properties of ideal and real quantum dots (QDs) are extensively studied and derived for therecent decade. Strain caused by the differences of the lattice constants of dot and wetting, barrier materials are decisivefor both the self-assembly mechanisms and the electro-optical properties. The research is mainly investigated forrealizing the strain effects on the optical properties of InAs/GaAs self-assembled QDs embedded in GaAs barrier layerincorporated with the three-dimensional (3D) Schordinger equation and solved by using finite element method (FEM).From 3D QD geometrical profiles establishing by the spatially geometric equations, the confined electron and holebandstructures on altering sized lens and pyramidal shape-like QDs with numerical calculations and strainedheterostructure of the finite element approximations have been proposed. Applying the fast FEM models, it isdemonstrated that the correspondence of ground, excited eigenstates, the probability of density function (|Ψ| 2 ) of theconfined levels from the single InAs QD to a matrix of nine QDs to obtain the transition energy and coordinatedabsorption wavelength to be predicted and summarized clearly.Through calculating energy levels within the conduction and valence band edge confinement on the InAs/GaAsheterostructure with FEM to contradistinguish with corrected to optical transitions and linear absorption spectra can beachieved for verifying to being the specific wavelengths from photoluminescence (PL) and photoresponse (PR)measurements for quantum dot infrared photodetector. By fitting the energy differences among the subbands, thegeometrical shape and size of QD can be predicted. Inducting the tendency from single QD to the matrix of 9 QDs, thestep-wise bands have been obtained being some regularity clearly. And from the transmission electron microscope (TEM)measurement, the dominant sizes of QDs in the really grown wafer remain the consistent with the numerical analysesapplied in 3D QD profile that is interpreted using spatially geometric equations." @default.
- W1963999914 created "2016-06-24" @default.
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- W1963999914 date "2007-02-08" @default.
- W1963999914 modified "2023-09-23" @default.
- W1963999914 title "Calculations of bandstructures on the lens and pyramid-shaped InAs quantum dot for confirming the photoluminescence and photoresponse" @default.
- W1963999914 doi "https://doi.org/10.1117/12.698911" @default.
- W1963999914 hasPublicationYear "2007" @default.
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