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- W1964016836 abstract "V2O5 films were deposited on silicon (111) substrates by vacuum evaporation technique at various deposition temperatures of 300, 473, 573, 623 and 673 K. X-ray characterization revealed that the films deposited at Ts≤473 K are amorphous and the film deposited at Ts≥573 K is polycrystalline. It is interesting to note that the film deposited at Ts=573 K is strongly oriented with (001) planes parallel to the substrate and the degree of preferred orientation towards (001) planes found to decrease with further increase in the deposition temperature. The influence of deposition temperature on the growth of the V2O5 films has been studied by Raman scattering spectroscopy. The films deposited on the silicon substrates maintained at 573 K are found to have better structural quality." @default.
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- W1964016836 date "2003-08-01" @default.
- W1964016836 modified "2023-09-26" @default.
- W1964016836 title "Influence of deposition temperature on the growth of vacuum evaporated V2O5 thin films" @default.
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- W1964016836 doi "https://doi.org/10.1016/s0167-577x(03)00185-x" @default.
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