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- W1964070329 abstract "Hydrogenated amorphous Si thin films were prepared by plasma-enhanced chemical vapor deposition technique. As-deposited samples were thermally annealed above 800°C to obtain nanocrystalline Si and the microstructures and carrier transport behaviors were evaluated. It was found that the crystallization of amorphous silicon can be improved by increasing the annealing temperature. Temperature-dependent Hall measurements were performed and the Hall mobility of the thermally annealed sample is 0.86 cm2/V·s, which is one order magnitude larger than that of as-deposited amorphous Si film. The nanocrystalline Si films exhibit a thermally activated electrical transport above room temperature." @default.
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- W1964070329 date "2014-10-01" @default.
- W1964070329 modified "2023-09-26" @default.
- W1964070329 title "Microstructures and carrier transport behaviors of nanocrystalline silicon thin films" @default.
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- W1964070329 doi "https://doi.org/10.1109/icsict.2014.7021177" @default.
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