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- W1964125760 abstract "Abstract We study, using ab initio calculations, small structures that are present at the early stages of growth of Ge on the Si(1 0 0) surface. Ad-atoms, ad-dimers, and ad-trimers are investigated. We consider different configurations of the adsorbed structures, and present results for their relaxed geometries and relative energies." @default.
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- W1964125760 date "1999-12-01" @default.
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- W1964125760 title "Initial stages of Ge growth on Si(100): ad-atoms, ad-dimers, and ad-trimers" @default.
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- W1964125760 doi "https://doi.org/10.1016/s0921-4526(99)00580-3" @default.
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