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- W1964258934 abstract "Sb-assisted GaInNAs/GaAs quantum wells (QWs) with high (42.5%) indium content were investigated systematically. Transmission electron microscopy, reflection high-energy electron diffraction and photoluminescence (PL) measurements reveal that Sb acts as a surfactant to suppress three-dimensional growth. The improvement in the 1.55 μm range is much more apparent than that in the 1.3 μm range, which can be attributed to the difference in N composition. The PL intensity and the full-width at half maximum of the 1.55 μm single-QW were comparable with that of the 1.3 μm QWs." @default.
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- W1964258934 date "2006-05-01" @default.
- W1964258934 modified "2023-09-23" @default.
- W1964258934 title "The role of Sb in the molecular beam epitaxy growth of 1.30–1.55μm wavelength GaInNAs/GaAs quantum well with high indium content" @default.
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- W1964258934 doi "https://doi.org/10.1016/j.jcrysgro.2006.02.002" @default.
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