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- W1964291640 abstract "A new reactor has been designed for atmospheric pressure MOVPE growth of InP and InGaAsP alloys. This has a chimney geometry with a sidearm added for susceptor rotation and fully mechanized substrate loading. A high aspect ratio rectangular body permits growth on a 50 mm diameter wafer with relatively high gas velocities at modest flows. A two-step growth of InP on GaAs substrates has been used to evaluate thickness uniformity in this reactor. Two flow regimes have been identified from this study. At low flows, thermal buoyancy effects are important and the growth uniformity is improved by use of a dense carrier gas (N 2 H 2 mixture) and cooling of the reactor wall opposite the substrate. At high flows the best thickness uniformity is obtained with a pure H 2 carrier gas without the opposite wall cooling." @default.
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- W1964291640 date "1988-01-01" @default.
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- W1964291640 title "New reactor design for growth of InP and related alloys" @default.
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- W1964291640 doi "https://doi.org/10.1016/0022-0248(88)90534-9" @default.
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