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• W1964299519 abstract "This work investigates the C K-edge x-ray absorption near-edge structure (XANES), valence-band photoelectron spectroscopy (PES), and Fourier transform infrared (FTIR) spectra of Si-doped hydrogenated amorphous carbon films. The C K-edge XANES and valence-band PES spectra indicate that the sp2∕sp3 population ratio decreases as the amount of tetramethylsilane vapor precursor increases during deposition, which suggest that Si doping% enhances sp3 and reduces sp2-bonding configurations. FTIR spectra show the formation of a polymeric sp3 C–Hn structure and Si–Hn bonds, which causes the Young’s modulus and hardness of the films to decrease with the increase of the Si content." @default.
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• W1964299519 date "2004-11-01" @default.
• W1964299519 modified "2023-10-01" @default.
• W1964299519 title "Electronic structure and bonding properties of Si-doped hydrogenated amorphous carbon films" @default.
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• W1964299519 doi "https://doi.org/10.1063/1.1812594" @default.
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