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- W1964326292 abstract "Tungsten deposition and subsequent etch back are used in device manufacturing to make tungsten plug interconnects. This process utilizes an aggressive, fluorine radical rich, plasma chemistry to clean a deposition chamber and to remove the W film. This results in a variety of particle defects. Usually, the defects arise from two distinct sources: (a) hardware components degradation, and (b) inefficient evacuation of etch by-products. This paper describes new types of defects located in the W film (so-called “in-film” defects). The defects were analyzed by Scanning Electron Microscopy with Energy Dispersive X-ray Spectrometer (SEM/EDX) and Atomic Force Microscopy (AFM) on whole 200-mm wafers and then by Scanning Auger Microscopy (SAM), Electron Backscattered Diffraction (EBSD) and Transmission Electron Microscopy (TEM) on sectioned samples. Also, we have used a newly developed defect marking technique, which eliminates the problem of locating defects in analytical tools. Defects of interest fall into two classes: (a) W ring-like defects and (b) W hillocks. We show that the first class is formed due to contamination at the TiN glue layer (interface with the W). This inhibits W growth locally during deposition. The second class (hillocks) has the same composition as the rest of the film. These defects are large W single-crystal grains with no indication of foreign material or disruption at the TiN/W interface. The mechanism of formation of the W in-film hillocks is not understood." @default.
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- W1964326292 date "1998-01-01" @default.
- W1964326292 modified "2023-10-07" @default.
- W1964326292 title "Tungsten in-film defect characterization" @default.
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- W1964326292 doi "https://doi.org/10.1063/1.56868" @default.
- W1964326292 hasPublicationYear "1998" @default.
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