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- W1964349865 abstract "We report here a photopatternable ultrathin gate dielectric for the fabrication of low-voltage-operating organic field-effect transistors (OFETs) and inverters. The gate dielectric material is composed of a photocrosslinkable polymer, poly(vinyl cinnamate), and a thermally crosslinkable silane crosslinking reagent, 1,6-bis(trichlorosilyl)hexane. The spin-coated dielectric is photocured with ultraviolet light, which enables fine film patterning via regular photolithography. After thermal curing (at 110 °C), the dielectric showed excellent insulating properties (a leakage current density of ≈10−7 A/cm2 at 2.0 MV/cm) for an ultrathin film thickness of 70 nm, thus reducing the operating voltage of the OFETs and inverters to −5 V." @default.
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- W1964349865 date "2009-08-17" @default.
- W1964349865 modified "2023-09-27" @default.
- W1964349865 title "Photopatternable ultrathin gate dielectrics for low-voltage-operating organic circuits" @default.
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- W1964349865 doi "https://doi.org/10.1063/1.3206665" @default.
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