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• W1964579298 abstract "Lateral diffusion of In in 20–100-nm-thick Au-In films has been studied in the 60–150 °C temperature range. Indium diffusion due to the chemical potential gradient occurs from In to Au-In with an AuIn2 phase being formed in the diffusion zone. The growth of the diffusion zone obeys a parabolic rate law with the growth rate strongly dependent on In concentration of the films. In order to understand these phenomena, the kinetics of the AuIn2 phase formation is analyzed considering In diffusion due to the chemical potential gradient with subsequent formation of AuIn2 at the diffusion front. As a result of this analysis, the diffusion coefficient of In in AuIn2 films is obtained as DIn=1.2×10−3 exp(−0.52 eV/kT) cm2/s. Grain boundary diffusion is thought to be the dominant mechanism. Additionally, a combined diffusion parameter δDg (δ is the grain boundary width) of 1.3×10−16 cm3/s (60 °C) is obtained." @default.
• W1964579298 created "2016-06-24" @default.
• W1964579298 creator A5053752834 @default.
• W1964579298 date "1985-10-15" @default.
• W1964579298 modified "2023-09-25" @default.
• W1964579298 title "Lateral diffusion of In and formation of AuIn₂in Au‐In thin films" @default.
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• W1964579298 doi "https://doi.org/10.1063/1.335808" @default.
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