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• W1964594731 abstract "Electroluminescent devices have been achieved by anodization of a n+-type polycrystalline Si film deposited on p-type substrate. Al and AuPd pads were used to form the electrical contact on the porous n+-p junction. The current-voltage characteristics of the structures are significantly dependent on the type of metallic contact. Electroluminescence of the devices is also investigated." @default.
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• W1964594731 date "1996-08-01" @default.
• W1964594731 modified "2023-09-23" @default.
• W1964594731 title "Electroluminescent porous silicon p-n junction using polycrystalline silicon films" @default.
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• W1964594731 doi "https://doi.org/10.1016/0169-4332(96)00086-4" @default.
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