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- W1964595026 abstract "Abstract In this study, the electrical and physical characteristics of the high-k Nd 2 O 3 polyoxides by RF sputtering system deposited on the polycrystalline silicon have been investigated. It can be seen that the high-k Nd 2 O 3 polyoxides with post rapid thermal annealing (RTA) at 900 °C can show higher breakdown electric field, smaller gate voltage shift and larger charge-to-breakdown in comparison with the as-deposited polyoxide. This is believed to be due to the post-RTA treatment can passivate the defects and trap states to terminate the dangling bonds and traps existed in the high-k Nd 2 O 3 dielectric and the interface between high-k film and polysilicon." @default.
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- W1964595026 date "2010-05-01" @default.
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- W1964595026 title "Physical and electrical characteristics of the high-k Nd2O3 polyoxide deposited on polycrystalline silicon" @default.
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- W1964595026 doi "https://doi.org/10.1016/j.microrel.2010.02.005" @default.
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