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- W1964640241 endingPage "860" @default.
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- W1964640241 abstract "In this study, we fabricate amorphous indium oxide thin film transistors (TFTs) on a display glass substrate at various annealing temperatures from 200 °C to 300 °C." @default.
- W1964640241 created "2016-06-24" @default.
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- W1964640241 date "2015-01-01" @default.
- W1964640241 modified "2023-10-17" @default.
- W1964640241 title "Fabrication of high-performance, low-temperature solution processed amorphous indium oxide thin-film transistors using a volatile nitrate precursor" @default.
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- W1964640241 doi "https://doi.org/10.1039/c4tc01568a" @default.
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