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• W1964681055 abstract "High-voltage and high-current SiC bipolar diode modules are fabricated and characterized under static and dynamic conditions. The modules are built using 6 × 6 mm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> SiC chips that are fabricated on 3-in SiC substrates. Individual chips were also packaged in an ISOPLUS™ package and used to perform switching tests on the diodes. The modules have been fully characterized under static and dynamic conditions. These modules are targeted for high-voltage high-frequency applications as well as antiparallel diodes for 6.5-kV insulated gate bipolar transistors, insulated gate commutated thyristors, and injection enhanced insulated gate bipolar transistors." @default.
• W1964681055 created "2016-06-24" @default.
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• W1964681055 date "2014-01-01" @default.
• W1964681055 modified "2023-09-26" @default.
• W1964681055 title "Static and Dynamic Characterization of 6.5-kV 100-A SiC Bipolar PiN Diode Modules" @default.
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• W1964681055 doi "https://doi.org/10.1109/tia.2013.2271741" @default.
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