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- W1964859341 abstract "A new trench gate IGBT structure with a floating P region is proposed, which introduces a floating P region into the trench accumulation layer controlled IGBT (TAC-IGBT). The new structure maintains a low on-state voltage drop and large forward biased safe operating area (FBSOA) of the TAC-IGBT structure while reduces the leakage current and improves the breakdown voltage. In addition, it enlarges the short circuit safe operating area (SCSOA) of the TAC-IGBT, and is simple in fabrication and design. Simulation results indicate that, for IGBT structures with a breakdown voltage of 1200 V, the leakage current of the new trench gate IGBT structure is one order of magnitude lower than the TAC-IGBT structure and the breakdown voltage is 150 V higher than the TAC-IGBT." @default.
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- W1964859341 date "2010-02-01" @default.
- W1964859341 modified "2023-09-23" @default.
- W1964859341 title "Trench gate IGBT structure with floating P region" @default.
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- W1964859341 doi "https://doi.org/10.1088/1674-4926/31/2/024003" @default.
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