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- W1964915633 abstract "An optical technique for precise, non-contact, and real time measurement of silicon wafer temperature that uses the polarized reflectivity ratio Rp/Rs is described. The proposed method is based on temperature dependence of the optical functions of silicon. Expected strong temperature sensitivity is obtained near band gap. Simultaneous monitoring of temperature and oxide layer thickness is discussed using measurements at four wavelength 365 nm, 405 nm, 546 nm, and 820 nm." @default.
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- W1964915633 date "2007-10-01" @default.
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- W1964915633 title "Optical measurements of silicon wafer temperature" @default.
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- W1964915633 doi "https://doi.org/10.1016/j.apsusc.2007.07.086" @default.
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