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- W1964958598 endingPage "3730" @default.
- W1964958598 startingPage "3724" @default.
- W1964958598 abstract "TaN x films were deposited by chemical vapor deposition using a pentakis(diethylamido)tantalum (PDEAT) source with and without NH 3 at temperatures ranging from 300 to 375°C. It was observed that both the resistivity and carbon content of the film drastically decreased upon the addition of NH 3 . For example, the resistivity decreased from 60,000 to 12,000 μΩ cm, and the apparent carbon content obtained by Auger electron spectroscopy decreased from 30 to 1 atom % by the addition of 25 sccm NH 3 . The grain size initially increased with the addition of 5 sccm NH 3 in the source gas, but then decreased as the NH 3 flow rate was increased to more than 10 sccm. As-deposited TaN x film has a face-centered cubic structure irrespective of the amount of NH 3 . The density of the film increased from about 5.1 to 7.2 g cm -3 (bulk density of TaN: 16.3 g cm -3 ). Barrier failure results identified by the etch-pit test showed that a 50 nm thickness of the TaN x barrier deposited by a single source of PDEAT survived up to 500°C after 1 h annealing. The TaN x film deposited with 25 sccm NH 3 survived up to 550°C after 1 h annealing. However, the step coverage of the films deposited with NH 3 is drastically decreased, from more than 80% (NH 3 = 0 sccm) to less than 10% (NH 3 = 25 sccm). Thus, while the addition of NH 3 significantly improves both the resistivity and carbon content in the film, it deteriorates the step coverage of the film." @default.
- W1964958598 created "2016-06-24" @default.
- W1964958598 creator A5016725135 @default.
- W1964958598 creator A5023283426 @default.
- W1964958598 creator A5025175126 @default.
- W1964958598 creator A5038354434 @default.
- W1964958598 creator A5059531713 @default.
- W1964958598 date "1999-10-01" @default.
- W1964958598 modified "2023-10-18" @default.
- W1964958598 title "Diffusion Barrier Properties of Metallorganic Chemical Vapor Deposited Tantalum Nitride Films Against Cu Metallization" @default.
- W1964958598 doi "https://doi.org/10.1149/1.1392540" @default.
- W1964958598 hasPublicationYear "1999" @default.
- W1964958598 type Work @default.
- W1964958598 sameAs 1964958598 @default.
- W1964958598 citedByCount "46" @default.
- W1964958598 countsByYear W19649585982013 @default.
- W1964958598 countsByYear W19649585982014 @default.
- W1964958598 countsByYear W19649585982016 @default.
- W1964958598 countsByYear W19649585982020 @default.
- W1964958598 countsByYear W19649585982021 @default.
- W1964958598 countsByYear W19649585982022 @default.
- W1964958598 countsByYear W19649585982023 @default.
- W1964958598 crossrefType "journal-article" @default.
- W1964958598 hasAuthorship W1964958598A5016725135 @default.
- W1964958598 hasAuthorship W1964958598A5023283426 @default.
- W1964958598 hasAuthorship W1964958598A5025175126 @default.
- W1964958598 hasAuthorship W1964958598A5038354434 @default.
- W1964958598 hasAuthorship W1964958598A5059531713 @default.
- W1964958598 hasConcept C121332964 @default.
- W1964958598 hasConcept C171250308 @default.
- W1964958598 hasConcept C191897082 @default.
- W1964958598 hasConcept C192562407 @default.
- W1964958598 hasConcept C194760766 @default.
- W1964958598 hasConcept C2778112282 @default.
- W1964958598 hasConcept C2778836790 @default.
- W1964958598 hasConcept C2779227376 @default.
- W1964958598 hasConcept C49040817 @default.
- W1964958598 hasConcept C514619126 @default.
- W1964958598 hasConcept C57410435 @default.
- W1964958598 hasConcept C69357855 @default.
- W1964958598 hasConcept C97355855 @default.
- W1964958598 hasConceptScore W1964958598C121332964 @default.
- W1964958598 hasConceptScore W1964958598C171250308 @default.
- W1964958598 hasConceptScore W1964958598C191897082 @default.
- W1964958598 hasConceptScore W1964958598C192562407 @default.
- W1964958598 hasConceptScore W1964958598C194760766 @default.
- W1964958598 hasConceptScore W1964958598C2778112282 @default.
- W1964958598 hasConceptScore W1964958598C2778836790 @default.
- W1964958598 hasConceptScore W1964958598C2779227376 @default.
- W1964958598 hasConceptScore W1964958598C49040817 @default.
- W1964958598 hasConceptScore W1964958598C514619126 @default.
- W1964958598 hasConceptScore W1964958598C57410435 @default.
- W1964958598 hasConceptScore W1964958598C69357855 @default.
- W1964958598 hasConceptScore W1964958598C97355855 @default.
- W1964958598 hasIssue "10" @default.
- W1964958598 hasLocation W19649585981 @default.
- W1964958598 hasOpenAccess W1964958598 @default.
- W1964958598 hasPrimaryLocation W19649585981 @default.
- W1964958598 hasRelatedWork W1933256704 @default.
- W1964958598 hasRelatedWork W1972497710 @default.
- W1964958598 hasRelatedWork W1980996074 @default.
- W1964958598 hasRelatedWork W2014649041 @default.
- W1964958598 hasRelatedWork W2026622689 @default.
- W1964958598 hasRelatedWork W2028793278 @default.
- W1964958598 hasRelatedWork W2037602003 @default.
- W1964958598 hasRelatedWork W2071395325 @default.
- W1964958598 hasRelatedWork W2117343296 @default.
- W1964958598 hasRelatedWork W3049629210 @default.
- W1964958598 hasVolume "146" @default.
- W1964958598 isParatext "false" @default.
- W1964958598 isRetracted "false" @default.
- W1964958598 magId "1964958598" @default.
- W1964958598 workType "article" @default.