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• W1964993642 abstract "Single wurtzite p-type Zn1−yCuyO1−xSx alloy films with 0.081≤x≤0.186 and 0.09≤y≤0.159 were grown on quartz reproducibly by magnetron sputtering. The alloys show very stable p-type conductivity with a hole concentration of 4.31–5.78×1019 cm−3, a resistivity of 0.29–0.34 Ω cm and a mobility of 0.32–0.49 cm2 V−1 s−1. The p-type conductivity is attributed to substitution of Cu+1 for the Zn site, and the ionization energy of the Cu+1 acceptor is measured to be 53 meV, much less than that of Cu-doped ZnO reported previously. The small ionization energy is due to Cu heavy doping and increase in valence band maximum of ZnO induced by alloying with S." @default.
• W1964993642 created "2016-06-24" @default.
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• W1964993642 date "2010-10-04" @default.
• W1964993642 modified "2023-09-23" @default.
• W1964993642 title "Electrical properties and stability of p-type ZnO film enhanced by alloying with S and heavy doping of Cu" @default.
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• W1964993642 doi "https://doi.org/10.1063/1.3496038" @default.
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