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- W1964996939 abstract "The interface state density of silicon metal-oxide-semiconductor (MOS) transistors operated at room, liquid-nitrogen, and liquid-helium temperatures is investigated using the conventional subthreshold slope technique. The magnitude of the interface state density found of the order of 1013–1014/eV cm2 at liquid-helium temperature, suggests that such states correspond to the localized states situated in the band tails below the mobility edge of the two-dimensional subband. Moreover, the interface state densities found by the subthreshold slope have been confirmed using the dynamic transconductance technique." @default.
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- W1964996939 date "1990-02-15" @default.
- W1964996939 modified "2023-10-08" @default.
- W1964996939 title "Assessment of interface state density in silicon metal-oxide-semiconductor transistors at room, liquid-nitrogen, and liquid-helium temperatures" @default.
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- W1964996939 doi "https://doi.org/10.1063/1.345572" @default.
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