FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W1965046860> ?p ?o ?g. }

• W1965046860 endingPage "2124" @default.
• W1965046860 startingPage "2119" @default.
• W1965046860 abstract "The instability of the gate bias and drain bias stresses is observed at high temperature in amorphous InGaZnO thin-film transistors (a-IGZO TFTs). The transfer characteristics of a-IGZO TFTs at different temperatures are also investigated in this paper. The transfer curve exhibits an apparent subthreshold current stretchout phenomenon at high temperature. The stretchout phenomenon becomes more serious with the increase of the temperature. In addition, thermally induced holes are accumulated by the negative gate voltage and get trapped in the gate dielectric or at the dielectric/channel interface at high temperature. The negative threshold voltage shifts with stress time and this is because the trapped holes induce more electrons. For drain bias stress at high temperature, the transfer curve exhibits an apparent shift during drain bias stress at high temperature compared with the same at room temperature. At high temperature, thermally induced holes are trapped in the gate insulator, especially near the drain region. Capacitance-voltage measurements have been used to prove the nonuniform hole-trapping phenomenon. Furthermore, the simulation of the capacitance-voltage and current-voltage curves also have been applied to confirm the hole-trapping distribution. The obtained results clarify that the instability is caused by nonuniform hole-trapping phenomenon." @default.
• W1965046860 created "2016-06-24" @default.
• W1965046860 creator A5002508116 @default.
• W1965046860 creator A5012907837 @default.
• W1965046860 creator A5014223462 @default.
• W1965046860 creator A5035455487 @default.
• W1965046860 creator A5058354990 @default.
• W1965046860 creator A5064627564 @default.
• W1965046860 creator A5065573876 @default.
• W1965046860 creator A5067837460 @default.
• W1965046860 creator A5090129459 @default.
• W1965046860 date "2014-06-01" @default.
• W1965046860 modified "2023-10-14" @default.
• W1965046860 title "Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors" @default.
• W1965046860 cites W1879684899 @default.
• W1965046860 cites W1967722749 @default.
• W1965046860 cites W1973785269 @default.
• W1965046860 cites W1982344327 @default.
• W1965046860 cites W1987103483 @default.
• W1965046860 cites W1987259331 @default.
• W1965046860 cites W1992753652 @default.
• W1965046860 cites W1994277498 @default.
• W1965046860 cites W2010540469 @default.
• W1965046860 cites W2011160719 @default.
• W1965046860 cites W2012367093 @default.
• W1965046860 cites W2018540978 @default.
• W1965046860 cites W2019022267 @default.
• W1965046860 cites W2020183477 @default.
• W1965046860 cites W2029436209 @default.
• W1965046860 cites W2037751927 @default.
• W1965046860 cites W2040179822 @default.
• W1965046860 cites W2042238896 @default.
• W1965046860 cites W2057958307 @default.
• W1965046860 cites W2067411033 @default.
• W1965046860 cites W2081368007 @default.
• W1965046860 cites W2082535925 @default.
• W1965046860 cites W2089241994 @default.
• W1965046860 cites W2094774020 @default.
• W1965046860 cites W2096727548 @default.
• W1965046860 cites W2099276065 @default.
• W1965046860 cites W2128583000 @default.
• W1965046860 cites W2131716975 @default.
• W1965046860 doi "https://doi.org/10.1109/ted.2014.2319105" @default.
• W1965046860 hasPublicationYear "2014" @default.
• W1965046860 type Work @default.
• W1965046860 sameAs 1965046860 @default.
• W1965046860 citedByCount "30" @default.
• W1965046860 countsByYear W19650468602014 @default.
• W1965046860 countsByYear W19650468602015 @default.
• W1965046860 countsByYear W19650468602016 @default.
• W1965046860 countsByYear W19650468602018 @default.
• W1965046860 countsByYear W19650468602019 @default.
• W1965046860 countsByYear W19650468602020 @default.
• W1965046860 countsByYear W19650468602021 @default.
• W1965046860 countsByYear W19650468602022 @default.
• W1965046860 countsByYear W19650468602023 @default.
• W1965046860 crossrefType "journal-article" @default.
• W1965046860 hasAuthorship W1965046860A5002508116 @default.
• W1965046860 hasAuthorship W1965046860A5012907837 @default.
• W1965046860 hasAuthorship W1965046860A5014223462 @default.
• W1965046860 hasAuthorship W1965046860A5035455487 @default.
• W1965046860 hasAuthorship W1965046860A5058354990 @default.
• W1965046860 hasAuthorship W1965046860A5064627564 @default.
• W1965046860 hasAuthorship W1965046860A5065573876 @default.
• W1965046860 hasAuthorship W1965046860A5067837460 @default.
• W1965046860 hasAuthorship W1965046860A5090129459 @default.
• W1965046860 hasBestOaLocation W19650468602 @default.
• W1965046860 hasConcept C103566474 @default.
• W1965046860 hasConcept C119599485 @default.
• W1965046860 hasConcept C121332964 @default.
• W1965046860 hasConcept C127413603 @default.
• W1965046860 hasConcept C133386390 @default.
• W1965046860 hasConcept C138885662 @default.
• W1965046860 hasConcept C147789679 @default.
• W1965046860 hasConcept C156465305 @default.
• W1965046860 hasConcept C159985019 @default.
• W1965046860 hasConcept C165801399 @default.
• W1965046860 hasConcept C172385210 @default.
• W1965046860 hasConcept C17525397 @default.
• W1965046860 hasConcept C178790620 @default.
• W1965046860 hasConcept C185592680 @default.
• W1965046860 hasConcept C18903297 @default.
• W1965046860 hasConcept C192562407 @default.
• W1965046860 hasConcept C195370968 @default.
• W1965046860 hasConcept C207821765 @default.
• W1965046860 hasConcept C21036866 @default.
• W1965046860 hasConcept C26873012 @default.
• W1965046860 hasConcept C2777924906 @default.
• W1965046860 hasConcept C2779227376 @default.
• W1965046860 hasConcept C30066665 @default.
• W1965046860 hasConcept C41895202 @default.
• W1965046860 hasConcept C49040817 @default.
• W1965046860 hasConcept C557185 @default.
• W1965046860 hasConcept C56052488 @default.
• W1965046860 hasConcept C57879066 @default.
• W1965046860 hasConcept C86803240 @default.
• W1965046860 hasConcept C87359718 @default.
• W1965046860 hasConceptScore W1965046860C103566474 @default.

• next