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- W1965140294 abstract "The static and impulse current-voltage characteristics of silicon reverse biased p+-n-n+ diodes, are investigated. In the region of the avalanche breakdown a negative differential resistance, which leads to a current filament, is observed in these diodes. The influence is studied of the impurity concentration in the base and the base width on the value of the critical current, which determines the appearence of a negative resistance section a t the current-voltage (I-U) characteristics. It is shown, that the process of the formation of a high-current density filament in the static regime develops in the microplasmas region. Under the switching on of diodes in the working scheme the generation of relaxation oscillations is observed. It may lead to catastrophic failure of diodes in schemes with a high parasite capacity of mounting. Die statische und Impuls-Strom-Spannungscharakteristik von in Sperrichtung gepolten p+-n-n+- Dioden werden untersucht. Im Bereich des Lawinendurchbruchs wird in diesen Dioden ein negativer differentieller Widerstand beobachtet, der sich zu einem Stromkanal ausbildet. Der Einfluß der Störstellenkonzentration der Basis und der Basisweite auf den kritischen Stromwert, der das Auftreten eines Abschnittes mit negativem Widerstand in der Strom-Spannungs (I-U)-Charakteristik bestimmt, wird untersucht. Es wird gezeigt, daß der Prozeß der Ausbildung eines Kanals mit hoher Stromdichte sich im statischen Regime im Bereich der Mikroplasmen entwickelt. Beim Einschalten der Dioden in der Betriebsschaltung wird die Erzeugung von Relaxationsschwingungen beobachtet. Dies kann zu katastrophalen Fehlern der Dioden in Schaltungen mit hohen parasitären Schaltkapazitaten fiihren." @default.
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- W1965140294 date "1981-11-16" @default.
- W1965140294 modified "2023-09-27" @default.
- W1965140294 title "Negative resistance and current filament in avalanche diodes" @default.
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- W1965140294 doi "https://doi.org/10.1002/pssa.2210680105" @default.
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