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- W1965268851 abstract "We demonstrate for the first time a fluorine incorporated band- engineered (BE) tunnel oxide (SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /HfSiO/SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ) TANOS with excellent program / erase (P/E) characteristics and endurance to 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sup> cycles. Incorporating fluorine in the tunnel dielectric improves Si/SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> interface resulting in excellent endurance of nearly constant over 3 V P/E window for at least 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sup> cycles. Fluorine also reduces interface state generation during retention by ~20%. Furthermore, Fluorine passivates bulk traps leading to as much as ~10times higher charge to breakdown (Q <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>bd</sub> ) and ~10-50times lower interface state density (Dit). Fluorine passivation for BE-TANOS is significant because it improves reliability assisting implementation of TANOS flash NVM beyond the 20 nm node." @default.
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- W1965268851 date "2009-05-01" @default.
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- W1965268851 title "A Novel Fluorine Incorporated Band Engineered (BE) Tunnel (SiO2/ HfSiO/ SiO2) TANOS with Excellent Program/Erase & Endurance to 10^5 Cycles" @default.
- W1965268851 doi "https://doi.org/10.1109/imw.2009.5090575" @default.
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