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- W1965336434 abstract "ABSTRACT Double layer dielectrics, namely the ferroelectric film and translation layer between the film and substrate account for the current relaxations and coulomb-volt characteristics of double-layer structures that are analyzed in this article. The current density in such films is considered to be negligibly small in comparison with the current density in the transition layer. The latter is considered to be subject to the Poole-Frenkel mechanism if one takes into account the covering of coulomb potentials by neighboring Frenkel centers. It has been established that the current conditioned by the charge injection under the application of constant voltage decreases hyperbolically with time. The equations for coulomb-volt characteristics that have been calculated take into account the line dielectric layers and the ferroelectric film nonlinearity. The fracture on these characteristics in both cases has been stated. Account dependences have been compared with the corresponding experimental ones." @default.
- W1965336434 created "2016-06-24" @default.
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- W1965336434 date "2009-08-19" @default.
- W1965336434 modified "2023-09-26" @default.
- W1965336434 title "TRAPPED CHARGE IN FERROELECTRIC FILMS (Ba,Sr)TiO3 ON SILICON" @default.
- W1965336434 cites W1972109723 @default.
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- W1965336434 doi "https://doi.org/10.1080/10584580903062424" @default.
- W1965336434 hasPublicationYear "2009" @default.
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