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W1965406962 abstract "Methods for the reduction of micro-twin defects in InSb/AlInSb epilayers were investigated by using 〈1̄16〉-directional TEM analysis. The use of a 2°off-axis GaAs (001) substrate which has been known as an effective way to reduce micro-twin densities was combined with another approach, the use of an As2 beam for oxide desorption from a GaAs substrate surface. The combined method yields a micro-twin density of 3.3×102/cm, which is 3.0 times smaller than for a similar previous method with an Sb2 flux. This study also demonstrates the usefulness of 〈1̄16〉-directional TEM analysis for investigating micro-twin defects in (001) thin films." @default.
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W1965406962 date "2010-01-01" @default.
W1965406962 modified "2023-10-16" @default.
W1965406962 title "Micro-twin Defects in InSb/AlInSb layers grown on (001) GaAs ∼ Application of the <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML altimg=si1.gif display=inline overflow=scroll><mml:mrow><mml:mo>〈</mml:mo><mml:mover accent=true><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mo>̄</mml:mo></mml:mrow></mml:mover><mml:mn>16</mml:mn><mml:mo>〉</mml:mo></mml:mrow></mml:math>-directional TEM analysis ∼" @default.
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W1965406962 doi "https://doi.org/10.1016/j.phpro.2010.01.194" @default.
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