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- W1965514488 abstract "The theory of the photoconductive effect in semiconductors is extended to include nonlinear recombination rates. A method for determining the excess majority-carrier density and lifetime (defined by the non-linear recombination rate) as functions of the excess minority-carrier concentration is developed from this theory and applied to experimental measurements on a p-type sample of InSb at 80°K. After an initial sharp decrease from its small signal value of 5.2×10−6 sec the hole lifetime becomes constant at a value ∼3.05×10−6 sec when the excess electron concentration increases from 6.0×109 cm−3 to the maximum value investigated, 15.5×109 cm−3. The monotonic increase of the excess hole concentration Δp with excess electron concentration shows a tendency to flatten off at the higher densities (Δp=6.2×1013 cm−3 when Δn=15.5×109 cm−3). A previous theory for the large-signal photomagnetoelectric effect by the present authors is modified by the removal of the assumption that the excess majority-carrier concentration be much smaller than the corresponding thermal equilibrium concentration. The resulting corrections (∼15%) to the graphs of electron lifetime and electron surface recombination velocity as functions of excess electron density, for the same sample of p-type InSb that was used in the present investigation, are also presented." @default.
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- W1965514488 date "1964-02-01" @default.
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- W1965514488 title "Large-Signal Photoconductive Effect" @default.
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