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- W1965540959 abstract "Epitaxial lattice-matched Ca0.43Sr0.57F2 films have been grown by flash evaporation technique on (100)-oriented GaAs substrates at substrates temperatures in the range from 725 to 850 K. Rutherford backscattering/channeling (RBS), electron microscopy (TEM, SEM), reflection high energy diffraction (RHEED) and Auger Spectroscopy (AES) has been used to study the epitaxial quality fo the grown layers. For most fluoride films the RBS yield (Xmin) was better than 40% with the best value found at 4.5%. Transmission electron microscopy revealed a high density of defects. The interdiffusion between epitaxial film and substrate is rather small at growth and annealing temperatures T ⪷ 875 K. A 15 to 20 nm thick interfacial region presented no preferred diffusion behaviour of the constituents as determined by AES. Electrical measurements of the (CaSr)F2 films show typical resistivities of ⪸1011 Ω cm." @default.
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- W1965540959 date "1987-03-01" @default.
- W1965540959 modified "2023-09-27" @default.
- W1965540959 title "Epitaxial Ca0.43Sr0.57F2/GaAs(100) heterostructures grown by flash evaporation technique" @default.
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- W1965540959 doi "https://doi.org/10.1016/0022-0248(87)90331-9" @default.
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