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- W1965571505 abstract "The application of molecular beam epitaxy (MBE) to the growth of compound semiconductors for devices and monolithic circuits requires excellent film uniformity and reproducibility of growth conditions. Conventional conical crucible cells for group III elements typically provide excellent film uniformity but exhibit a significant flux transient upon shutter opening due to the cooling of the melt surface. Flux transients result in poor control over initial growth stoichiometry and uncertainty over the initial film parameters which limit film reproducibility. This paper reports on a unique pyrolytic boron nitride (PBN) crucible arrangement for group III elements which simultaneously provides excellent film uniformity and a low flux transient. The cell utilizes a deep PBN crucible for a large recessed melt volume and a PBN insert to maintain beam uniformity. The cell provides film thickness and doping variations of less than 2% across a 2‐in.‐diam wafer and a flux transient of less than 3% when the shutter is..." @default.
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- W1965571505 date "1985-11-01" @default.
- W1965571505 modified "2023-09-25" @default.
- W1965571505 title "Elimination of Flux Transients in Molecular Beam Epitaxy" @default.
- W1965571505 doi "https://doi.org/10.1149/1.2113675" @default.
- W1965571505 hasPublicationYear "1985" @default.
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