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• W1965587281 abstract "Pockel’s effect and optical rectification are demonstrated in the charge space region of a (111)-cut near-intrinsic silicon crystal by the use of a planar metal-insulator-semiconductor structure. The results show that both Pockel’s effect and optical rectification are so considerable that these effects should be taken into account for designing silicon-based photonic devices. The anisotropy of optical rectification is measured too, and experimental results are in good accordance with the theoretical analysis. These effects can also be used as a tool to investigate the properties of the charge space region of silicon devices in future." @default.
• W1965587281 created "2016-06-24" @default.
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• W1965587281 date "2008-06-23" @default.
• W1965587281 modified "2023-09-26" @default.
• W1965587281 title "Pockel’s effect and optical rectification in (111)-cut near-intrinsic silicon crystals" @default.
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• W1965587281 doi "https://doi.org/10.1063/1.2952462" @default.
• W1965587281 hasPublicationYear "2008" @default.
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