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- W1965607921 abstract "Characterization of small integrated dipole antennas on high-resistivity Si substrates for use in on-chip wireless interconnection was performed and results were compared with those obtained by 3-dimensional (3D) finite-element simulation. The integrated antennas on standard P-type Si substrates with resistivities of 10 Ω·cm, 79.6 Ω·cm, 132 Ω·cm and 2.29 kΩ·cm, and one high-energy proton-implanted Si substrate were measured. When antenna length was 3.0 mm and antenna distance was 3.0 cm on a 10-Ω·cm-resistivity Si substrate, the antenna transmission gain was -43 dB. The antenna transmission gain was improved to -24 dB on the 2.29 kΩ·cm Si substrate. By using high-resistivity Si substrates, signal transmission via integrated antennas becomes possible." @default.
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- W1965607921 date "2004-04-01" @default.
- W1965607921 modified "2023-10-16" @default.
- W1965607921 title "Effect of High-Resistivity Si Substrate on Antenna Transmission Gain for On-Chip Wireless Interconnects" @default.
- W1965607921 cites W2103643630 @default.
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- W1965607921 doi "https://doi.org/10.1143/jjap.43.2297" @default.
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