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- W1965682034 abstract "The nitrogen-related infrared absorption band at 471 cm−1 is found in the ternary and quaternary alloys GaAs1−xNx and InyGa1−yAs1−xNx, respectively, grown by solid-source molecular beam epitaxy. Implantation experiments with the isotopes 14N and 15N show that the band is due to a local vibrational mode of isolated nitrogen on the arsenic site. The strength of the band in GaAs1−xNx layers correlates for x<0.01 quantitatively with the decrease of the lattice parameter determined by X-ray diffraction. We conclude further that nitrogen in InyGa1−yAs1−xNx quantum well structures is surrounded by four nearest-neighbor gallium atoms." @default.
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- W1965682034 date "2001-01-01" @default.
- W1965682034 modified "2023-09-29" @default.
- W1965682034 title "Local vibrational mode absorption of nitrogen in GaAsN and InGaAsN layers grown by molecular beam epitaxy" @default.
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- W1965682034 doi "https://doi.org/10.1016/s0921-4526(01)00442-2" @default.
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