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- W1965718135 abstract "Abstract A precipitate defect structure was introduced into silicon crystals by diffusion of gold at elevated temperatures. The nature of the defect structure and the response of the crystals to deformation were studied by X-ray topography and transmission electron microscopy. The following results were obtained: 1. 1. The shape, size and the distribution of the lattice defects depended on the quenching temperature and cooling rate. High temperature and rapid quenching gave rise to a homogeneous distribution of small faulted dislocation loops throughout the matrix, while slow cooling resulted in plate-like defects precipitated at impurity striations. 2. 2. TEM analysis showed the faulted loops to be of the interstitial type. 3. 3. Deformation of notched crystals below the ductile - brittle temperature resulted in a cleavage type of fracture preceded by a microplastic zone at the notch tip. The precipitate structure removed from the (111) fracture plane remained unaffected by the fracture process and the lattice regions of silicon between the precipitates exhibited after fracture the characteristics of a perfect lattice (undisturbed PF pattern). 4. 4. Deformation of unnotched crystals above the ductile - brittle temperature induced microplastic zones which were formed by dislocation sources situated at surface sites and not by dislocation sources associated with precipitates." @default.
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- W1965718135 date "1975-01-01" @default.
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- W1965718135 title "Dislocation generation associated with crack growth of silicon crystals containing precipitate defect structure" @default.
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- W1965718135 doi "https://doi.org/10.1016/0025-5416(75)90029-4" @default.
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