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Matches in SemOpenAlex for { <https://semopenalex.org/work/W1965731966> ?p ?o ?g. }

• W1965731966 abstract "We have achieved high device performance in self-aligned inversion-channel InGaAs MOSFETs, as well as a CET of it ≤ 1011 eV−1cm−2, and high-temperature thermal stability withstanding >850°C RTA in GGO and a CET of 2 on InGaAs. Remarkable device performances in self-aligned, inversion-channel Ge MOSFET using GGO without any interfacial passivation layers (IPLs), and inversion-channel and accumulation type GaN MOSFET's with high k's as gate dielectrics have also been attained. Interfacial characteristics including energy band parameters were studied using x-ray photoelectron spectroscopy (XPS)." @default.
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• W1965731966 date "2010-01-01" @default.
• W1965731966 modified "2023-09-22" @default.
• W1965731966 title "Nano-electronics of high k dielectrics on exotic semiconductors for science and technology beyond Si CMOS" @default.
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• W1965731966 doi "https://doi.org/10.1109/vtsa.2010.5488900" @default.
• W1965731966 hasPublicationYear "2010" @default.
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