Matches in SemOpenAlex for { <https://semopenalex.org/work/W1965776368> ?p ?o ?g. }
Showing items 1 to 76 of
76
with 100 items per page.
- W1965776368 abstract "Raman scattering data is used to determine the lowering of the barrier height resulting from a chemical passivation treatment which has previously been shown to reduce surface recombination velocity. Using a GaAs sample doped so that free electron carrier density in the bulk is 1018cm-3, the barrier height is shown to drop from .78 ± .02 ev to .51 ± .16 ev. Recently Sandroff et. al. 1 have shown that GaAs may be chemically passivated so as to increase dramatically the gain of a bipolar transistor. The passivation treatment con-sists of spinning a thin coat of one of a class of inorganic sulfides 2 onto the GaAs surface in air; in particular an aqueous solution of Na2S reduces the surface recombination velocity to nearly that of an AlGaAs/GaAs heterostructure interface2. Clearly the barrier height3 of the GaAs surface has been lowered, and a direct contactless measurement of this change can be made using Raman scattering tech-niques.4-6 Whereas previous work on band bending effects in GaAs used either <110> surfaces and resonance excita-tion5'6 or <111> surfaces,4 experiments to be described in this paper were performed on <100> surfaces, since this is the surface of choice. in fabricating devices. Excitation was supplied by the 5145A line of an Ar+ ion laser. Backscatter-ing geometry was used in a microprobe apparatus which has been described elsewhere.7 The E vector of the incoming radiation was always fixed parallel to the {100} direction in the plane of the sample and the scattered radiation was analyzed in the perpendicular direction, i.e. z(xy)i. Thus only LO phonons are allowed according to the selection rules.8 Samples were prepared by MBE. For n-type doping with n<1017cm-3, the LO phonon was observed at 291.5 cm-1. Some slight polarization leakage enabled obser-vation of the TO phonon at 268 cm-1; the LO/TO ratio was in excess of 16. At sufficiently high doping levels, the sur-face depletion layer will become thinner 5 than the 1053A penetration depth9 at 5145A. In the bulk doped material, the LO phonon couples with the free electron plasmon1°-12 and splits into two peaks whose frequencies are a function of free carrier density and excitation wavelength.13,14" @default.
- W1965776368 created "2016-06-24" @default.
- W1965776368 creator A5030993937 @default.
- W1965776368 creator A5064866431 @default.
- W1965776368 date "1988-01-19" @default.
- W1965776368 modified "2023-09-23" @default.
- W1965776368 title "Raman Scattering As A Measure Of Semiconductor Surface Passivation" @default.
- W1965776368 doi "https://doi.org/10.1117/12.941929" @default.
- W1965776368 hasPublicationYear "1988" @default.
- W1965776368 type Work @default.
- W1965776368 sameAs 1965776368 @default.
- W1965776368 citedByCount "1" @default.
- W1965776368 crossrefType "proceedings-article" @default.
- W1965776368 hasAuthorship W1965776368A5030993937 @default.
- W1965776368 hasAuthorship W1965776368A5064866431 @default.
- W1965776368 hasConcept C108225325 @default.
- W1965776368 hasConcept C113196181 @default.
- W1965776368 hasConcept C120665830 @default.
- W1965776368 hasConcept C121332964 @default.
- W1965776368 hasConcept C125206250 @default.
- W1965776368 hasConcept C169573571 @default.
- W1965776368 hasConcept C171250308 @default.
- W1965776368 hasConcept C185592680 @default.
- W1965776368 hasConcept C191486275 @default.
- W1965776368 hasConcept C192562407 @default.
- W1965776368 hasConcept C199289684 @default.
- W1965776368 hasConcept C2779227376 @default.
- W1965776368 hasConcept C33574316 @default.
- W1965776368 hasConcept C40003534 @default.
- W1965776368 hasConcept C43617362 @default.
- W1965776368 hasConcept C49040817 @default.
- W1965776368 hasConcept C79794668 @default.
- W1965776368 hasConceptScore W1965776368C108225325 @default.
- W1965776368 hasConceptScore W1965776368C113196181 @default.
- W1965776368 hasConceptScore W1965776368C120665830 @default.
- W1965776368 hasConceptScore W1965776368C121332964 @default.
- W1965776368 hasConceptScore W1965776368C125206250 @default.
- W1965776368 hasConceptScore W1965776368C169573571 @default.
- W1965776368 hasConceptScore W1965776368C171250308 @default.
- W1965776368 hasConceptScore W1965776368C185592680 @default.
- W1965776368 hasConceptScore W1965776368C191486275 @default.
- W1965776368 hasConceptScore W1965776368C192562407 @default.
- W1965776368 hasConceptScore W1965776368C199289684 @default.
- W1965776368 hasConceptScore W1965776368C2779227376 @default.
- W1965776368 hasConceptScore W1965776368C33574316 @default.
- W1965776368 hasConceptScore W1965776368C40003534 @default.
- W1965776368 hasConceptScore W1965776368C43617362 @default.
- W1965776368 hasConceptScore W1965776368C49040817 @default.
- W1965776368 hasConceptScore W1965776368C79794668 @default.
- W1965776368 hasLocation W19657763681 @default.
- W1965776368 hasOpenAccess W1965776368 @default.
- W1965776368 hasPrimaryLocation W19657763681 @default.
- W1965776368 hasRelatedWork W1963721936 @default.
- W1965776368 hasRelatedWork W1968508279 @default.
- W1965776368 hasRelatedWork W1984411543 @default.
- W1965776368 hasRelatedWork W1985832113 @default.
- W1965776368 hasRelatedWork W1986583667 @default.
- W1965776368 hasRelatedWork W1986954671 @default.
- W1965776368 hasRelatedWork W2003184069 @default.
- W1965776368 hasRelatedWork W2012078163 @default.
- W1965776368 hasRelatedWork W2023499889 @default.
- W1965776368 hasRelatedWork W2036518279 @default.
- W1965776368 hasRelatedWork W2052027089 @default.
- W1965776368 hasRelatedWork W2071672662 @default.
- W1965776368 hasRelatedWork W2080694172 @default.
- W1965776368 hasRelatedWork W2087651914 @default.
- W1965776368 hasRelatedWork W2088571657 @default.
- W1965776368 hasRelatedWork W2091518611 @default.
- W1965776368 hasRelatedWork W2802473977 @default.
- W1965776368 hasRelatedWork W2899761321 @default.
- W1965776368 hasRelatedWork W2919230971 @default.
- W1965776368 hasRelatedWork W804518412 @default.
- W1965776368 isParatext "false" @default.
- W1965776368 isRetracted "false" @default.
- W1965776368 magId "1965776368" @default.
- W1965776368 workType "article" @default.