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- W1965829948 abstract "Model experiments were performed on MOS (metal-oxide semiconductor) capacitors to study ion beam induced charge generation in silicon-on-insulator (SOI) devices. Surprisingly large induced charge was found and a lateral non-uniformity of the induced charge was discovered across the top electrode of the capacitor. In this paper we will give a simple model for the charge induction in MOS structures and an explanation of the lateral changes in the amount of induced charge." @default.
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- W1965829948 date "2006-08-01" @default.
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- W1965829948 title "Heavy ion beam induced current/charge (IBIC) through insulating oxides" @default.
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- W1965829948 doi "https://doi.org/10.1016/j.nimb.2006.03.115" @default.
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