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- W1965910919 abstract "The mathematical analysis as well as experimental results are presented. The impurity atom distributions in the semiconductor junctions are obtained from surface acoustic wave (SAW) spectroscopy by monitoring transverse acoustoelectric voltage (TAV) vs. externally applied voltage. Es werden sowohl die mathematische Analyse als auch die experimentellen Ergebnisse beschrieben. Die Störstellenverteilung des Halbleiterübergangs wird aus der Spektroskopie akustischer Oberflächenwellen (SAW) mittels Beobachtung der transversalen akustischen Spannung (TAV) über der äußeren angelegten Spannung erhalten." @default.
- W1965910919 created "2016-06-24" @default.
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- W1965910919 date "1987-10-16" @default.
- W1965910919 modified "2023-09-25" @default.
- W1965910919 title "Measurement of Free-Carrier Distributions by Means of Nondestructive SAW-TAV Spectroscopy" @default.
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- W1965910919 doi "https://doi.org/10.1002/pssa.2211030238" @default.
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