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- W1965913364 abstract "A novel surface gate structure, consisting of a central gate and two side gates, is proposed to generate an effectively sharp potential barrier for two-dimensional electrons confined to a semiconductor heterojunction deep below the sample surface. The side gates are biased at a higher potential than the central gate to enhance the large-wave-vector Fourier components of the potential and therefore to compensate partially for the strong decay, due to fringing fields, of these components as a function of the distance below the surface. The reflection coefficient calculated for the proposed potential barrier exhibits strong oscillations as a function of barrier height, much stronger than a conventional single gate. The results suggest that the proposed gate structure should find use in realization of an electron interferometer which can serve as a building block for novel electron interference devices." @default.
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- W1965913364 title "Novel surface gate structure to induce sharp potential barriers in two-dimensional electron systems" @default.
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- W1965913364 doi "https://doi.org/10.1063/1.112730" @default.
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