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• W1965992188 abstract "We report bulk-quality n-type SrTiO3 (n-SrTiO3) thin films fabricated by pulsed laser deposition, with electron mobility as high as 6600 cm2 V−1 s−1 at 2 K and carrier density as low as 2.0×1018 cm−3 (∼0.02 at. %), far exceeding previous pulsed laser deposition films. This result stems from precise strontium and oxygen vacancy defect chemistry management, providing a general approach for defect control in complex oxide heteroepitaxy." @default.
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• W1965992188 date "2010-07-05" @default.
• W1965992188 modified "2023-10-01" @default.
• W1965992188 title "Dramatic mobility enhancements in doped SrTiO3 thin films by defect management" @default.
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• W1965992188 doi "https://doi.org/10.1063/1.3457994" @default.
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