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- W1965992648 abstract "Stoichiometric VO2 thin films were fabricated on glass substrates by reactive electron-beam evaporation under controlled oxygen pressures. Rapid thermal annealing (RTA) was examined as a promising annealing method to crystallize the as-deposited thin film. An RTA temperature of 400°C and time of 20–30 s were found to be optimum annealing conditions to crystallize the thin films, as confirmed by X-ray diffraction analysis and examining the film thermochromism. VO2 thin films were doped with 1–6 at.% Sn to fabricate V1−xSnxO2 thin films. The Sn-doped VO2 thin films exhibited distinct thermochromism as the undoped thin films, however, they showed significantly higher transition temperatures than undoped VO2 thin films." @default.
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- W1965992648 date "1996-12-01" @default.
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- W1965992648 title "Thermochromism of rapid thermal annealed VO2 and Sn-doped VO2 thin films" @default.
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- W1965992648 doi "https://doi.org/10.1016/s0040-6090(96)09201-2" @default.
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