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• W1965998943 endingPage "17901" @default.
• W1965998943 startingPage "17891" @default.
• W1965998943 abstract "The nitridation of the Si(111) surface by reaction with ${mathrm{NH}}_{3}$ was studied by low-energy electron microscopy (LEEM), low-energy electron diffraction (LEED), and scanning tunneling microscopy (STM). Reaction layers with periodicities of (8ifmmodetimeselsetexttimesfi{}8), (8/3ifmmodetimeselsetexttimesfi{} 8) / 3 ), (3/4ifmmodetimeselsetexttimesfi{} 3) / 4 ), and (3 ensuremath{surd}3 /4ifmmodetimeselsetexttimesfi{}3 ensuremath{surd}3 /4) were observed depending on the temperature of nitridation and duration of electron-beam exposure. The nucleation and growth of the nitride layer on well-oriented and miscut Si(111) surfaces were observed by STM and followed in real time by video LEEM. The (8ifmmodetimeselsetexttimesfi{}8) nitride islands nucleate and grow in the same manner as the (7ifmmodetimeselsetexttimesfi{}7) domains, with the apex of the triangle pointing in the [1ifmmodebarelsetextasciimacronfi{} 1ifmmodebarelsetextasciimacronfi{}2] direction away from the step into the upper terrace. On the miscut surface, (8ifmmodetimeselsetexttimesfi{}8) nitride growth proceeds with widening of the terraces and step bunching. The (3/4ifmmodetimeselsetexttimesfi{} 3) / 4 ) multiplet structure, on the other hand, nucleates randomly on comtaminated sites on the surface, or evolves directly from the (8ifmmodetimeselsetexttimesfi{}8) structure." @default.
• W1965998943 created "2016-06-24" @default.
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• W1965998943 date "1995-06-15" @default.
• W1965998943 modified "2023-09-23" @default.
• W1965998943 title "Reactive crystal growth in two dimensions: Silicon nitride on Si(111)" @default.
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• W1965998943 doi "https://doi.org/10.1103/physrevb.51.17891" @default.
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