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• W1966048303 abstract "Abstract Hydrogenated amorphous carbon nitride (a-CN:H) thin films were deposited by hot-wire chemical vapor deposition (HWCVD) using the gas mixture of CH4, NH3 and H2 precursor gases. The structural and electronic environments studies of H2 diluted a-CN:H films were carried out by Raman spectroscopy and X-ray photoelectron spectroscopy. The nitrogen content increases while the total carbon contents decreases with increase in H2 flow rate from 0 sccm to 20 sccm in the a-CN:H films. Moreover, the detail analysis of the carbon core orbital, valence band and hole states of a-CN:H were discussed with different H2 flow rate." @default.
• W1966048303 created "2016-06-24" @default.
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• W1966048303 date "2009-08-01" @default.
• W1966048303 modified "2023-09-25" @default.
• W1966048303 title "Effect of H2 dilution on a-CN:H films deposited by hot-wire chemical vapor deposition" @default.
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• W1966048303 doi "https://doi.org/10.1016/j.apsusc.2009.07.020" @default.
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