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- W1966074049 abstract "Copper (Cu) electroplating (EP) process requires a Cu seed to conduct the current. Conventional physical vapor deposition (PVD) seed suffers from poor step coverage while chemical vapor deposition (CVD) seed is cost-ineffective. We therefore propose the use of electroless (EL) technique as a Cu seed deposition method and demonstrate its integration with conventional Cu EP. The EL seed has excellent step coverage which when combined with the bottom-up fill capability of additives-based EP process, produces void-free fill. The EL seed-EP Cu film stack has good resistivity, roughness and acceptable (111) texture. However, some adhesion issues remain to be solved for this integration scheme." @default.
- W1966074049 created "2016-06-24" @default.
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- W1966074049 date "2004-09-01" @default.
- W1966074049 modified "2023-09-27" @default.
- W1966074049 title "The use of electroless copper seed in electrochemical deposited copper interconnect" @default.
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- W1966074049 doi "https://doi.org/10.1016/j.tsf.2004.05.100" @default.
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