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• W1966095106 abstract "In previous work, Cobb and Zakhor (SPIE, 2726, pp.208-222, 1996) introduced the VTR (Variable Threshold Resist) model and demonstrated its accuracy for fitting empirical data for 365 nm illumination (SPIE, 3051, pp. 458-468, 1997). The original work showed how EPE can be modeled as a function of a peak local image intensity and the slope of the adjacent cutline. Since then, authors such as J. Randall, et al., (Microel. Engineering, 46, pp. 59-63, 1999) have analyzed the VTR model including other parameters such as dose. In the current approach, the original VTR has been enhanced to the VTR-Enhanced (or VTRE) in 1999, and VT-5 models in 2002, for production in OPC applications, which include other image intensity parameters. Here we present a comprehensive report on VT (Variable Threshold) process modeling. It has the demonstrated ability to accurately capture resist and etching responses, alone or in the combination with experimental VEB (Variable Etch Bias, SPIE, 4346, p. 98, 2001) model, for a wide range of process conditions used in the contemporary IC manufacturing. We analyzed 14 different semiconductor company processes experimental setups totaling 3000 CD measurements to prove this point. We considered 248, 193, and 157 nm annular and standard illumination sources for poly, metal, and active layers. We report an accuracy of VT family models under a wide range of conditions, show usage methodology, and introduce a novel method for calculating VTRE wafer predictions on a dense image intensity grid. We use multiple regression method to fit VT models and discuss methods for calculating regression coefficients. It is shown that models with too many eigenvectors exhibit a tendency to overfit CD curves. Sub-sample cross-validation and overfitting criteria are derived to avoid this problem. The section on test pattern and usage methodology describes practical issues needed for VT usage in OPC modeling. Particularly we discuss the effects of metrology errors on modeling. Also we introduce criteria for the important issue of model stability and propose refined test pattern structures designed to uniformly cover the VT parameter ranges. It is often required that the model has to 'hit' some CD measurements exactly. We introduce the 'bubble' technique to accomplish this. A 'bubble' constitutes an additional term in the VT functional form; it explains single CD measurement. We demonstrate how 'bubbles' help fit the pitch uniformity and iso-line linearity curves exactly. Lastly, the section on dense region calculation demonstrates how this TCAD-oriented technique can be used for tuning OPC algorithms. In its original form, VTR can easily be applied to sparse imaging at sample sites for OPC/ORC applications. It is useful to be able to calculate the VT wafer prediction for a fully dense grid of values, and plot the results like an aerial image contour plot." @default.
• W1966095106 created "2016-06-24" @default.
• W1966095106 creator A5006764495 @default.
• W1966095106 creator A5055021168 @default.
• W1966095106 creator A5062466077 @default.
• W1966095106 date "2002-07-15" @default.
• W1966095106 modified "2023-09-24" @default.
• W1966095106 title "Universal process modeling with VTRE for OPC" @default.
• W1966095106 doi "https://doi.org/10.1117/12.474587" @default.
• W1966095106 hasPublicationYear "2002" @default.
• W1966095106 type Work @default.
• W1966095106 sameAs 1966095106 @default.
• W1966095106 citedByCount "23" @default.
• W1966095106 countsByYear W19660951062014 @default.
• W1966095106 countsByYear W19660951062015 @default.
• W1966095106 countsByYear W19660951062022 @default.
• W1966095106 crossrefType "proceedings-article" @default.
• W1966095106 hasAuthorship W1966095106A5006764495 @default.
• W1966095106 hasAuthorship W1966095106A5055021168 @default.
• W1966095106 hasAuthorship W1966095106A5062466077 @default.
• W1966095106 hasConcept C111919701 @default.
• W1966095106 hasConcept C11413529 @default.
• W1966095106 hasConcept C120665830 @default.
• W1966095106 hasConcept C121332964 @default.
• W1966095106 hasConcept C159985019 @default.
• W1966095106 hasConcept C160671074 @default.
• W1966095106 hasConcept C171250308 @default.
• W1966095106 hasConcept C192562407 @default.
• W1966095106 hasConcept C204323151 @default.
• W1966095106 hasConcept C2777441419 @default.
• W1966095106 hasConcept C2779227376 @default.
• W1966095106 hasConcept C41008148 @default.
• W1966095106 hasConcept C49040817 @default.
• W1966095106 hasConcept C53524968 @default.
• W1966095106 hasConcept C78371743 @default.
• W1966095106 hasConcept C93038891 @default.
• W1966095106 hasConcept C98045186 @default.
• W1966095106 hasConceptScore W1966095106C111919701 @default.
• W1966095106 hasConceptScore W1966095106C11413529 @default.
• W1966095106 hasConceptScore W1966095106C120665830 @default.
• W1966095106 hasConceptScore W1966095106C121332964 @default.
• W1966095106 hasConceptScore W1966095106C159985019 @default.
• W1966095106 hasConceptScore W1966095106C160671074 @default.
• W1966095106 hasConceptScore W1966095106C171250308 @default.
• W1966095106 hasConceptScore W1966095106C192562407 @default.
• W1966095106 hasConceptScore W1966095106C204323151 @default.
• W1966095106 hasConceptScore W1966095106C2777441419 @default.
• W1966095106 hasConceptScore W1966095106C2779227376 @default.
• W1966095106 hasConceptScore W1966095106C41008148 @default.
• W1966095106 hasConceptScore W1966095106C49040817 @default.
• W1966095106 hasConceptScore W1966095106C53524968 @default.
• W1966095106 hasConceptScore W1966095106C78371743 @default.
• W1966095106 hasConceptScore W1966095106C93038891 @default.
• W1966095106 hasConceptScore W1966095106C98045186 @default.
• W1966095106 hasLocation W19660951061 @default.
• W1966095106 hasOpenAccess W1966095106 @default.
• W1966095106 hasPrimaryLocation W19660951061 @default.
• W1966095106 hasRelatedWork W1973336329 @default.
• W1966095106 hasRelatedWork W1976886430 @default.
• W1966095106 hasRelatedWork W1977347983 @default.
• W1966095106 hasRelatedWork W2000358180 @default.
• W1966095106 hasRelatedWork W2017837294 @default.
• W1966095106 hasRelatedWork W2036249767 @default.
• W1966095106 hasRelatedWork W2059584525 @default.
• W1966095106 hasRelatedWork W2078493491 @default.
• W1966095106 hasRelatedWork W2134420999 @default.
• W1966095106 hasRelatedWork W2244185694 @default.
• W1966095106 isParatext "false" @default.
• W1966095106 isRetracted "false" @default.
• W1966095106 magId "1966095106" @default.
• W1966095106 workType "article" @default.