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• W1966111651 endingPage "170" @default.
• W1966111651 startingPage "168" @default.
• W1966111651 abstract "The passivation of the Ge interface is a key issue in the fabrication of Ge MOSFETs. Recently, the poor reliability of Ge/GeO2/Al2O3 MOSFETs was attributed to the border traps in Al2O3. We here propose a Ge/GeO2/AlN stack model with AlN as buffer layer for more reliable Ge MOSFETs. Calculation suggests that AlN has the advantage of fewer border traps in the relevant energy range, high oxygen diffusion barrier and sufficiently large band offset to Ge." @default.
• W1966111651 created "2016-06-24" @default.
• W1966111651 creator A5000117158 @default.
• W1966111651 creator A5024796184 @default.
• W1966111651 creator A5067284848 @default.
• W1966111651 date "2015-11-01" @default.
• W1966111651 modified "2023-10-16" @default.
• W1966111651 title "AlN-GeO2 based gate stack for improved reliability of Ge MOSFETs" @default.
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• W1966111651 doi "https://doi.org/10.1016/j.mee.2015.04.081" @default.
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