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- W1966138536 startingPage "979" @default.
- W1966138536 abstract "The surface photovoltage (SPV), the contact potential difference (CPD) and the conductivity were measured as a function of temperature (170 K – 470 K) for undoped glow-discharge a-Si:H films. The samples have been transferred from the preparation system to the surface analysis chamber by an UHV lock. The investigations concern the as-deposited, the oxidized and the sputter-cleaned state of the samples as well as the state after bombardment with hydrogen ions and annealing. Most remarkable results are the strongly negative SPV at low temperatures, the decrease of the CPD below 280 K for all treatments except sputtering, the irreversible decrease of the conductivity after oxidation, and the occurrence of hopping conductivity after sputtering." @default.
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- W1966138536 date "1985-12-01" @default.
- W1966138536 modified "2023-09-26" @default.
- W1966138536 title "Surface studies on as-deposited a-Si:H films" @default.
- W1966138536 cites W1980542419 @default.
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- W1966138536 doi "https://doi.org/10.1016/0022-3093(85)90824-5" @default.
- W1966138536 hasPublicationYear "1985" @default.
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