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• W1966156913 endingPage "4421" @default.
• W1966156913 startingPage "4418" @default.
• W1966156913 abstract "We have measured the low temperature internal friction $({Q}^{ensuremath{-}1})$ of amorphous silicon $(aensuremath{-}mathrm{Si})$ films. e-beam evaporation or ${^{28}Smathrm{i}}^{+}$ implantation leads to the temperature-independent ${Q}_{0}^{ensuremath{-}1}$ plateau common to all amorphous solids. For hydrogenated amorphous silicon with 1 at. % H produced by hot wire chemical vapor deposition, however, ${Q}_{0}^{ensuremath{-}1}$ is over 200 times smaller than for e-beam a-Si. This is the first observation of an amorphous solid without any significant low energy excitations. It offers the opportunity to study amorphous solids containing controlled densities of tunneling defects, and thus to explore their nature." @default.
• W1966156913 created "2016-06-24" @default.
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• W1966156913 date "1997-06-09" @default.
• W1966156913 modified "2023-10-18" @default.
• W1966156913 title "Amorphous Solid without Low Energy Excitations" @default.
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• W1966156913 doi "https://doi.org/10.1103/physrevlett.78.4418" @default.
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