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• W1966201462 abstract "The interaction of Au, Ag, Al, In with etched or cleaved surfaces and with surfaces pertubed by oxygen exposure or by the deposition of a thin metal interlayer is studied. By using work function and surface photovoltage topographies, interface formation and Fermi-level pinning is studied. The contribution of both the initial surface properties and the nature of the metal to the features of the interfaces and of the diodes is analysed." @default.
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• W1966201462 date "1986-03-01" @default.
• W1966201462 modified "2023-10-18" @default.
• W1966201462 title "Formation and properties of (Au, Al, Ag, In) (InP-GaAs) Schottky diodes; contribution of the semiconductor surface to the diode characteristics" @default.
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• W1966201462 doi "https://doi.org/10.1016/0039-6028(86)90863-0" @default.
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